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Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

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Inorganic Materials Aims and scope

Abstract—

This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50–100) and, at the same time, a larger width (by a factor of ~2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs.

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ACKNOWLEDGMENTS

This work was supported by the Russian Federation Ministry of Education and Science as part of the program for improving the competitiveness of the National Nuclear Research University MEPhI (Moscow Engineering Physics Institute), agreement no. 02.a03.21.0005.

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Authors and Affiliations

  1. Sigm Plus Co., ul. Vvedenskogo 3, 117342, Moscow, Russia

    M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, Yu. L. Ryaboshtan, T. A. Bagaev, A. A. Padalitsa & A. A. Marmalyuk

  2. National Nuclear Research University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh. 31, 115409, Moscow, Russia

    A. A. Marmalyuk

  3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia

    M. G. Vasil’ev

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  1. M. A. Ladugin
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  2. A. Yu. Andreev
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  3. I. V. Yarotskaya
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  4. Yu. L. Ryaboshtan
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  5. T. A. Bagaev
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  6. A. A. Padalitsa
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  7. A. A. Marmalyuk
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  8. M. G. Vasil’ev
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Correspondence to M. A. Ladugin.

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Ladugin, M.A., Andreev, A.Y., Yarotskaya, I.V. et al. Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy. Inorg Mater 55, 315–319 (2019). https://doi.org/10.1134/S0020168519040095

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  • DOI: https://doi.org/10.1134/S0020168519040095

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