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Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes

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Inorganic Materials Aims and scope

Abstract—

A macromolecular concept of the structure of solids and induction constants are used to quantitatively assess the reactivity of hydroxyl groups on the surface of single-crystal matrices, as exemplified by silicon. The oxide layer on the surface of such matrices is shown to influence the reactivity of silanol groups in atomic layer deposition processes.

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REFERENCES

  1. Aleskovskii, V.B., Chemical assembly of materials, Vestn. Akad. Nauk SSSR, 1975, no. 6, pp. 48–54.

  2. Aleskovskii, V.B., On the nature of solid chemical compounds, Zh. Prikl. Khim. (Leningrad), 1982, vol. 55, no. 4, pp. 725–730.

    CAS  Google Scholar 

  3. Suntola, T., Atomic layer epitaxy, Mater. Sci. Rep., 1989, vol. 4, no. 7, pp. 261–312.

    Article  CAS  Google Scholar 

  4. Seidel, T., Londergan, A., and Winkler, L., Progress and opportunities in atomic layer deposition, Solid State Technol., 2003, no. 5, pp. 67–71.

  5. Miikkulainen, V., Leskela, M., Ritala, M., and Puurunen, R.L., Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends, J. Appl. Phys., 2013, vol. 113, no. 2, pp. 021 301–021 402.

  6. Yong Shin Kim and Sun Jin Yun, Nanolaminated Al2O3–TiO2 thin films grown by atomic layer deposition, J. Cryst. Growth, 2005, vol. 274, pp. 585–593.

  7. Fakhl’man, B.D., Khimiya novykh materialov i nanotekhnologii (The Chemistry of Advanced Materials and Nanotechnologies), Tret’yakov, Yu.D. and Gudilin, E.A., Eds., Moscow: Intellekt, 2011.

  8. Vladimirov, G.G., Fizika poverkhnosti tverdykh tel (The Physics of Solid Surfaces), St. Petersburg: Lan’, 2016.

  9. Hammett, L.P., Physical Organic Chemistry, New York: McGraw-Hill, 1970, 2nd ed.

    Google Scholar 

  10. Ezhovskii, Yu.K., A quantitative approach in chemical nanotechnology of solid surfaces, Khim. Fiz., 2006, vol. 25, no. 5, pp. 72–90.

    CAS  Google Scholar 

  11. Spravochnik khimika (Chemist’s Handbook), Leningrad: Khimiya, 1971.

  12. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, Amsterdam: North Holland, 1984.

    Google Scholar 

  13. Gromov, V.K., Vvedenie v ellipsometriyu (Introduction to Ellipsometry), Leningrad: Leningr. Gos. Univ., 1986.

  14. Ezhovskii, Yu.K., Preparation of nanostructured silicon oxide and silicon nitride films using nanotechnologies, Inorg. Mater., 2013, vol. 49, no. 9, pp. 904–908.

    Article  CAS  Google Scholar 

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  1. St. Petersburg State Technological Institute (Technical University), Moskovskii pr. 26, 190013, St. Petersburg, Russia

    Yu. K. Ezhovskii

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  1. Yu. K. Ezhovskii
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Correspondence to Yu. K. Ezhovskii.

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Translated by O. Tsarev

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Ezhovskii, Y.K. Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes. Inorg Mater 55, 101–105 (2019). https://doi.org/10.1134/S0020168519020031

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  • DOI: https://doi.org/10.1134/S0020168519020031

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