Abstract
The dielectric properties and ac electrical conductivity of TlSb1–xGa x S2 (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 104 to 3.5 × 107 Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb1–xGa x S2 (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS2 crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.
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Feng, W.X. and Yao, Y.G., Three-dimensional topological insulators: A review on host materials. Sci. China–Phys. Mech. Astron., 2012, vol. 55, pp. 2199–2212.
Semiconductors other than Group IV elements and III-V compounds, Data in Science and Technology, Madelung, O., Ed., Berlin: Springer, 1992, p. 149.
Jafarov, Ya.I., Babanly, I.M., Imamalieva, S.Z., et al., Solid-state phase equilibria and thermodynamic properties of ternary compounds in the Tl–Sb–S system, Inorg. Mater., 2011, vol. 47, no. 6, pp. 579–582.
Bohac, P., Bronnimann, E., and Gaumann, A., On the ternary compound TlSbS2 and its photoelectric properties, Mater. Res. Bull., 1974, vol. 9, pp. 1033–1040.
Rey, P.N., Jumas, J.C., Olivier-Fourcade, J., and Philippot, E., Sur les composes III–V–VI: etude structurale du disulfure d’antimoine et de thallium, TlSbS2, Acta Crystallogr., Sect. C: Cryst. Struct. Commun., 1983, vol. 39, pp. 971–974.
Dickson, F.W. and Radtke, A.S., Weissbergite, TlSbS2, a new mineral from the Carlin gold deposit, Nevada, Amer. Mineral., 1978, vol. 63, pp. 720–724.
Parto, M., Deger, D., Ulutas, K., and Yakut, S., Structure and dielectric behavior of TlSbS2, Appl. Phys. A, 2013, vol. 112, pp. 911–918.
Mustafaeva, S.N., Frequency dispersion of dielectric coefficients in layered TlGaS2 single crystals, Phys. Solid State, 2004, vol. 46, no. 6, pp. 1008–1010.
Mustafaeva, S.N., Dielectric properties of TlGa1–x-MnxS2 (0 ≤ x ≤ 0.03) single crystals, Inorg. Mater., 2006, vol. 42, no. 5, pp. 470–473.
Mustafaeva, S.N., High-frequency dielectric properties of TlGaS2〈Cr〉, Zh. Radioelektron., 2008, no. 8, pp. 1–8.
Mustafaeva, S.N., Dielectric and ac conductivity dispersion in TlGa1–xCoxS2 in the radio frequency range, Zh. Radioelektron., 2009, no. 4, pp. 1–10.
Mustafaeva, S.N., Asadov, M.M., Kerimova, E.M., and Gasanov, N.Z., Dielectric and optical properties of TlGa1–xErxS2 (x = 0, 0.001, 0.005, 0.01) single crystals, Inorg. Mater., 2013, vol. 49, no. 12, pp. 1175–1179.
Huheey, J.E., Inorganic Chemistry: Principles of Structure and Reactivity, New York: Harper and Row, 1983.
Mustafaeva, S.N., AC conductivity measurements for high-resistivity materials, Vse Mater. Entsiklopedich. Spravochnik, 2016, no. 10, pp. 74–79.
Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki (Electronic Materials), St. Petersburg: Lan’, 2004.
Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1971.
Pollak, M., Frequency dependence of conductivity in amorphous solids, Philos. Mag., 1971, vol. 23, pp. 519–542.
Mustafaeva, S.N., Asadov, M.M., and Ismailov, A.A., Charge transfer over localized states in a TlS single crystal, Phys. Solid State, 2008, vol. 50, no. 11, pp. 2040–2043.
Allakhverdiev, K.R., Vinogradov, E.A., Nani, R.Kh., et al., in Fizicheskie svoistva slozhnykh poluprovodnikov (Physical Properties of Mixed Semiconductors), Baku: Elm, 1982, pp. 55–63.
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Original Russian Text © S.M. Asadov, S.N. Mustafaeva, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 12, pp. 1257–1261.
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Asadov, S.M., Mustafaeva, S.N. Mechanism of AC charge transport in TlSb1–xGa x S2 (x = 0 and 0.03). Inorg Mater 53, 1228–1232 (2017). https://doi.org/10.1134/S0020168517120020
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DOI: https://doi.org/10.1134/S0020168517120020