Abstract
The techniques of atomic emission spectrometry with inductively coupled plasma (ICP-AES) for quantitative determination impurities in silicon, germanium, and their dioxides are developed. Analytical lines for silicon-matrix (29 trace elements) and germanium-matrix (42 trace elements) are selected. Matrix interferences caused by the presence of silicon and germanium in the solutions are studied. The optimal concentrations of matrix are determined. LODs for trace elements are in the range from n × 10–7 to n × 10–5 wt %; RSD < 20%. The accuracy of the results is confirmed by the method of “introduced–found.” The developed techniques are express, simple, and can determine a broad range of trace elements.
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Chanysheva, T.A., Shelpakova, I.R., and Saprykin, A.I., Determination of impurities in high-purity germanium dioxide by atomic emission spectral method, Zavod. Lab., Diagn. Mater., 2009, vol. 75, no. 1, pp. 7–10.
Karpov, Yu.A. and Orlova, V.A., Modern methods of autoclave sample preparation in chemical analysis of substances and materials, Zavod. Lab., Diagn. Mater., 2007, vol. 73, no. 1, pp. 4–11.
Dash, K. and Thangavel, S., Multichannel vapor phase digestion (MCVPD) of high purity quartz powder and the determination of trace impurities by ICP–AES and ICP–MS, At. Spectrosc., 2003, vol. 24, no. 4, pp. 143–148.
Pimenov, V.G., et al., Chemical—atomic—emission analysis of high-purity germanium with concentrating of impurities by vapor phase autoclave decomposition of sample in electrode, Zh. Anal. Khim., 1984, vol. 39, no. 9, pp. 1636–1639.
Karandashev, V.K., Bezrukov, L.B., Kornoukhov, V.N., Nosenko, S.V., and Glavin, G.G., Ovchinnikov S.V., Analysis of germanium and germanium dioxide samples by mass-spectrometry and atomic emission spectroscopy, J. Anal. Chem., 2009, vol. 64, no. 3, pp. 259–267.
Maksimov, G.A., Pimenov, V.G., and Timonin, D.A., Analysis of high-purity germanium by atomic absorption method using vapor gas autoclave disclosure of the sample with xenon difluoride for concentrating of impurities, Vysokochist. Veshchestva, 1988, no. 1, pp. 149–154.
Maksimov, G.A., Pimenov, V.G., and Timonin, D.A., Chemical-atomic absorption analysis of high-purity silicon with the detection limit of impurities on the level of 10–9–10–11%, Vysokochist. Veshchestva, 1993, no. 3, pp. 127–134.
GOST (State Standard) 26239.0-84: Silicon Semiconductor, Initial Products for its Obtaining and Quartz Methods of Analysis, Moscow: Izd. Standartov, 1985.
Pupyshev, A.A. and Danilova, D.A., Ispol’zovanie atomno-emissionnoi spektrometrii s induktivno svyazannoi plazmoi dlya analiza materialov i produktov chernoi metallurgii (Using Atomic Emission Spectrometry with Inductively Coupled Plasma for Analysis of Materials and Products of Ferrous Metallurgy), Yekaterinburg: Ural. Gos. Tekh. Univ.–Ural. Politekh. Univ., 2002.
Tsygankova, A.R., Makashova, G.V., and Shelpakova, I.R., Dependence of the Intensity of Spectral Lines of Elements on the Power of ICP-plasm and consumption of argon, Metodi Ob’ekti Khim. Anal., 2012, vol. 7, no. 3, pp. 138–142.
Lebedeva, R.V., et al., Influence of matrix component in atomic emission determination of impurities in nickel and its compounds, Vestn. Nizhegorod. Gos. Univ., 2013, no. 1, pp. 96–99.
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Original Russian Text © N.N. Khomichenko, A.V. Shaverina, A.R. Tsygankova, A.I. Saprykin, 2015, published in Zavodskaya Laboratoriya, Diagnostika Materialov, 2015, Vol. 81, No. 6, pp. 10–15.
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Khomichenko, N.N., Shaverina, A.V., Tsygankova, A.R. et al. ICP-AES analysis of silicon, germanium, and their oxides. Inorg Mater 52, 1405–1412 (2016). https://doi.org/10.1134/S0020168516140077
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DOI: https://doi.org/10.1134/S0020168516140077