Abstract
Polygonization processes in sapphire ribbons of basal orientation, 50 × 15 mm in cross-sectional dimensions have been studied using an optical polarization method, selective etching, and X-ray diffraction. Using a modified furnace, we have obtained block-free basal-plane-faceted crystals 450 mm in length.
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Original Russian Text © A.E. Andreev, E.F. Dolzhenkova, P.V. Konevskii, L.A. Litvinov, O.A. Lukienko, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 10, pp. 1105–1113.
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Andreev, A.E., Dolzhenkova, E.F., Konevskii, P.V. et al. Growth and defect structure of basal-plane-faceted sapphire ribbons. Inorg Mater 51, 1025–1032 (2015). https://doi.org/10.1134/S0020168515100015
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DOI: https://doi.org/10.1134/S0020168515100015