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Modeling of the influence of defects on the electronic structure of silicon nanoclusters

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Inorganic Materials Aims and scope

Abstract

The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon.

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Authors and Affiliations

  1. North-Caucasus Federal University, pr. Kulakova 2, Stavropol, 355029, Russia

    E. V. Sokolenko

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  1. E. V. Sokolenko
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Correspondence to E. V. Sokolenko.

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Original Russian Text © E.V. Sokolenko, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 9, pp. 938–945.

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Sokolenko, E.V. Modeling of the influence of defects on the electronic structure of silicon nanoclusters. Inorg Mater 51, 862–869 (2015). https://doi.org/10.1134/S0020168515080166

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  • DOI: https://doi.org/10.1134/S0020168515080166

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