Abstract
We have synthesized a novel TiSi2(C49)/Si silicon-technology-based semiconductor structure which possesses both photoelectric and luminescent properties and is potentially attractive for use in optoelectronic couples. According to IR spectroscopy results, increasing the synthesis temperature of C49 titanium disilicide increases its reflectance by 15% at wavenumbers from 500 to 1000 cm−1 and by 30% in the range 3000–4000 cm−1. Under excitation in the range 360–390 nm, the C49 TiSi2 films have been observed for the first time to exhibit luminescence between 400 and 750 nm, which correlates with the spectral distribution of their photosensitivity.
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Original Russian Text © V.I. Zhuravleva, P.P. Pershukevich, M.I. Markevich, V.F. Stel’makh, A.M. Chaplanov, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 4, pp. 395–398.
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Zhuravleva, V.I., Pershukevich, P.P., Markevich, M.I. et al. C49 TiSi2 on silicon: Preparation by rapid thermal processing and optical properties. Inorg Mater 50, 365–368 (2014). https://doi.org/10.1134/S0020168514040190
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DOI: https://doi.org/10.1134/S0020168514040190