Abstract
n-Bi2Te2.7Se0.3〈I〉 single crystals additionally doped with indium (0.1–2.0 mol % In2Te3) have been grown by Czochralski pulling through a floating crucible. As the In2Te3 content of the growth charge increases to 0.2 mol %, the thermoelectric figure of merit (Z) of the crystals increases from 0.0029 to 0.0031 K−1 and Z max shifts to higher temperatures by ∼30 K. Increasing the In2Te3 content to 2 mol % sharply reduces Z max to 0.002 K−1 and shifts the maximum to lower temperatures. This behavior of the thermoelectric figure of merit can be understood in terms of the nonmonotonic variation of electron mobility with indium and iodine concentrations in the crystals.
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Original Russian Text © T.E. Svechnikova, I.Yu. Nikhezina, M.A. Korzhuev, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 12, pp. 1442–1446.
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Svechnikova, T.E., Nikhezina, I.Y. & Korzhuev, M.A. Thermoelectric properties of n-Bi2Te2.7Se0.3〈I,In〉 crystals. Inorg Mater 47, 1314–1318 (2011). https://doi.org/10.1134/S002016851112017X
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DOI: https://doi.org/10.1134/S002016851112017X