Abstract
The initial stages of HgCdTe growth on Al2O3, GaAs, CdTe, and KCl substrates have been studied by electron diffraction. HgCdTe films were produced by pulsed laser deposition and isothermal vapor phase epitaxy. InGaAs films were grown by isothermal chloride epitaxy on GaAs substrates. In the initial stages of the growth process, we observed a transition from an amorphous to a textured polycrystalline phase and then to a mosaic single-crystal structure. We have calculated the critical size of crystalline grains below which amorphization occurs in II-VI and III-V compounds. The critical grain size agrees with the grain size of the disordered (amorphous) phase that forms in the initial stage of epitaxy. We have determined some characteristics of the heterostructures: critical film thickness below which pseudomorphic growth is possible without misfit dislocation generation, elastic stress in the epitaxial system, surface density of dangling bonds at dislocations, and the critical island radius above which no interfacial misfit dislocations are generated.
Similar content being viewed by others
References
Sidorov, Yu.G., Dvoretskii, S.A., Varavin, V.S., et al., Molecular-Beam Epitaxy of Mercury-Cadmium-Telluride Solid Solutions on Alternative Substrates, Semiconductors, 2001, vol. 35, no. 9, pp. 1045–1053.
Sidorov, Yu.G. and Trukhanov, E.M., On the Feasibility of the Formation of an Amorphous Phase during the Growth of Large-Lattice-Mismatch Heterostructures, Poverkhnost, 1992, no. 6, pp. 106–111.
Aleksandrov, L.N., Kinetika obrazovaniya i struktury tverdykh sloev (Formation Kinetics and Structure of Solid Layers), Novosibirsk: Nauka, 1972.
Rudyi, I.O., Kurilo, I.V., Frugynskyj, M.S., et al., Electron-Diffraction Investigation of HgCdTe Laser Deposited Films, Appl. Surf. Sci., 2000, vols. 154–155, pp. 206–210.
Voronin, V.A., Guba, S.K., and Kurilo, I.V., Chemical Vapor Deposition of III-V Hetero- and Nanostructures, Tekhnol. Konstr. Elektron. Appar., 2008, no. 5, pp. 36–40.
Kokhanenko, A.P., Kurilo, I.V., Rudyi, I.O., et al., CdHgTe/(Si, GaAs) Heterostructures Grown by MBE: Structure, Stress, and Physical Properties, Visn. NU Lviv. Politekh., Elektron., 2003, no. 482, pp. 3–12.
Kurilo, I.V., Rudyj, I.O., and Vlasenko, O.I., The Misfit Dislocations and Stresses in CdxHg1 −x Te/CdTe Heterojunctions, J. Cryst. Growth, 1999, no. 204, pp. 447–452.
Guba, S.K. and Kurilo, I.V., Some Features on Defect Formation in Transition Regions of Multilayer GaAs Homoepitaxial Structures, Funct. Mater., 2000, vol. 7, no. 4(2), pp. 815–818.
Novikov, B.V., Zegrya, G.G., Peleshchak, P.M., et al., Baric Properties of InAs Quantum Dots, Semiconductors, 2008, vol. 42, no. 9, pp. 1076–1083.
Batsanov, S.S. and Bokarev, V.P., On the Fragmentation Limit of Crystals of Inorganic Materials, Izv. Akad. Nauk SSSR, Neorg. Mater., 1980, vol. 16, no. 9, pp. 1650–1652.
Kurilo, I.V., Rudyi, I.A., and Guba, S.K., Estimative Calculations of the Dispersion Limit for AIIBVIand AIIIBV Crystals, Inorg. Mater., 2009, vol. 45, no. 12, pp. 1329–1332.
Baranskii, P.I., Klochkov, V.P., and Potykevich, I.V., Poluprovodnikovaya elektronika: Spravochnik (Semiconductor Electronics: A Handbook), Kiev: Naukova Dumka, 1975.
Kulish, U.M., Enthalpy of Point Defect Formation in II–VI Compounds, Izv. Akad. Nauk SSSR, Neorg. Mater., 1980, vol. 29, no. 14, pp. 563–566.
Sergeeva, L.A., Surface Energy and Critical Nuclei in Some ANB8 − N Semiconductors, in Sintez i rost sovershennykh kristallov i plenok poluprovodnikov (Synthesis and Growth of Perfect Semiconductor Crystals and Films), Novosibirsk, 1981, pp. 33–39.
Ormont, B.F., On the Correlation between the Thermodynamic, Electrical, and Mechanical Properties of Semiconductors, Dokl. Akad. Nauk SSSR, 1959, vol. 124, no. 1, pp. 129–132.
Petrov, Yu.I., Klastery i malye chastitsy (Clusters and Small Particles), Moscow: Nauka, 1986.
Komnik, Yu.F., Fizika metallicheskikh plenok. Razmernye i strukturnye effekty (Physics of Metallic Films: Size and Structure Effects), Moscow: Atomizdat, 1979.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © I.V. Kurilo, S.K. Guba, I.O. Rudyi, I.S. Virt, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 1, pp. 21–25.
Rights and permissions
About this article
Cite this article
Kurilo, I.V., Guba, S.K., Rudyi, I.O. et al. Transition from a disordered to a crystalline state in II–VI and III–V films. Inorg Mater 48, 16–20 (2012). https://doi.org/10.1134/S0020168511120107
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168511120107