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Structurally perfect silicon layers produced on sapphire by oxygen ion implantation

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Abstract

We demonstrate that the structural perfection of silicon layers on sapphire can be improved through high-temperature solid-state recrystallization after preamorphization of the most imperfect silicon layer near the silicon/sapphire interface by high-energy oxygen ions, followed by high-temperature recrystallization in an inert atmosphere.

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Authors and Affiliations

  1. Alekseev State Technical University, ul. Minina 24, Nizhni Novgorod, 603600, Russia

    V. M. Vorotyntsev

  2. Sedakov Research Institute of Measuring Systems, ul. Tropinina 47, Nizhni Novgorod, 603950, Russia

    E. L. Shobolov & V. A. Gerasimov

Authors
  1. V. M. Vorotyntsev
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  2. E. L. Shobolov
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  3. V. A. Gerasimov
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Corresponding author

Correspondence to V. M. Vorotyntsev.

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Original Russian Text © V.M. Vorotyntsev, E.L. Shobolov, V.A. Gerasimov, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 6, pp. 645–649.

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Vorotyntsev, V.M., Shobolov, E.L. & Gerasimov, V.A. Structurally perfect silicon layers produced on sapphire by oxygen ion implantation. Inorg Mater 47, 571–574 (2011). https://doi.org/10.1134/S0020168511060239

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  • DOI: https://doi.org/10.1134/S0020168511060239

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