Abstract
IR spectroscopic techniques widely used to determine the thickness and refractive index of layers and thin films of various materials are adapted for determining those of hydrogenated silicon layers. Based on a literature analysis, three formulas are chosen which enable the refractive index and thickness of such layers to be determined from reflection and transmission spectra. The formulas are applicable, with some restrictions, to other samples in the form of relatively transparent layers (films) on transparent substrates. Experimental data are presented that illustrate the use of the formulas.
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Bogdanovich, B.Yu., Grafutin, V.I., Kalugin, V.V., et al., Tekhnologii i metody issledovaniya struktur KNI (Technology and Characterization of SOI Structures), Moscow: MIET, MIFI, 2003, p. 288.
Stein, H.S., Bonding and Stability of Planed Hydrogen in Silicon, J. Electron. Mater., 1975, vol. 4, no. 1, pp. 159–174.
Budde, M., Lüpke, G., Chen, E., et al., Lifetimes of Hydrogen and Deuterium Related Vibrational Modes in Silicon, Phys. Rev. Lett., 2001, vol. 87, no. 14, paper 145501.
Budaragin, V.V., Issledovanie fizicheskikh protsessov ionnogo otshchepleniya (“Smart-cut”) opticheskimi metodami (Optical Study of Physical Smart Cut Processes), Moscow: Ross. Nauchnyi Tsentr “Kurchatovskii Institut,” 2004.
Brodsky, M.H., Cardona, M., and Cuomo, J.I., Infrared and Raman Spectra of the Silicon-Hydrogen Bonds in Amorphous Silicon Prepared by Glow Discharge and Sputtering, Phys. Rev. B: Solid State, 1977, vol. 16, no. 8, pp. 3556–3571.
Ukhanov, Yu.I., Opticheskie svoistva poluprovodnikov (Optical Properties of Semiconductors), Moscow: Nauka, 1977, pp. 68–70.
Rakov, A.V., Spektroskopiya tonkoplenochnykh poluprovodnikovykh struktur (Spectroscopy of Thin-Film Semiconductor Structures), Moscow: Sovetskoe Radio, 1975, p. 74.
Krylova, T.N., Interferentsionnye pokrytiya (Interference Coatings), Leningrad: Mashinostroenie, 1973.
Popov, V.F. and Gorin, Yu.V., Protsessy i ustanovki elektronno-ionnoi tekhnologii (Processes and Equipment in Electron-Ion Beam Technology), Moscow: Vysshaya Shkola, 1988.
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Original Russian Text © S.P. Timoshenkov, V.P. Pelipas, B.M. Simonov, O.M. Britkov, V.V. Kalugin, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 6, pp. 650–653.
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Timoshenkov, S.P., Pelipas, V.P., Simonov, B.M. et al. IR spectroscopic determination of the refractive index and thickness of hydrogenated silicon layers. Inorg Mater 47, 575–578 (2011). https://doi.org/10.1134/S0020168511060215
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DOI: https://doi.org/10.1134/S0020168511060215