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Optical and electrical properties of amorphous Si1 − x C x :H films

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Abstract

We report the optical and electrical properties of a-Si:H and a-Si1 − x C x :H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity.

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References

  1. Amorphous Semiconductors Technologies and Devices, Hamakawa, Y., Ed., Amsterdam: North-Holland, 1983.

    Google Scholar 

  2. Tetelbaum, D.I., Ezhevskii, A.A., and Mikhailov, A.N., Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Silicon on Ion-Irradiation Dose As Evidence of Nanostructuring, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2002, vol. 37, no. 11, pp. 1380–1382.

    Google Scholar 

  3. Afanas’ev, V.P., Gudovskikh, A.S., Nevedomskii, V.N., and Sazonov, A.P., Effect of Heat Treatment on the Structure and Properties of Films Produced by Cyclic Deposition, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2003, vol. 36, no. 2, pp. 238–243.

    Google Scholar 

  4. Golikova, O.A., Bogdanova, E.V., and Babakhodzhaev, U.S., Crystallization of Hydrogenated Amorphous Silicon Films Deposited under Various Conditions, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2002, vol. 36, no. 10, pp. 1259–1262.

    Google Scholar 

  5. Bakirov, M.A., Najafov, B.A., Mamedov, V.S., and Zeinalov, N.M., Electrical Properties of Amorphous Ge1 − x Si x Solid-Solution Films, Dokl. Akad. Nauk Az. SSR, 1989, vol. 14, no. 1, pp. 19–22.

    Google Scholar 

  6. Wen-Yaung Lee, X-Ray Photoelectron Spectroscopy and Electron Spectroscopy Studies of Glow Discharge Si1 − x Cx:H Films, J. Appl. Phys., 1980, vol. 51, no. 6, pp. 3365–3372.

    Article  CAS  Google Scholar 

  7. Najafov, B.A. and Isakov, G.I., Growth and Doping of Si-Ge Amorphous Films, Al’ternativnaya Energ. Ekol., 2005, no. 4 (24), pp. 79–81.

  8. Najafov, B.A., Single-Layer and Bilayer Solar Cells Based on Amorphous Films, ISJAEE, 2005, vol. 27, no. 7, pp. 62–64.

    Google Scholar 

  9. Najafov, B.A., Sbornik trudov mezhdunarodnoi konferentsii po amorfnym i mikrokristallicheskim poluprovodnikam (Proc. Int. Conf. on Amorphous and Microcrystalline Semiconductors), St. Petersburg: Politekhnicheskii Univ., 2006, pp. 293–294.

    Google Scholar 

  10. Connell, G.A.N. and Pawlik, I.R., Use of Hydrogenation in Structural and Electronic Studies of Gap States in Amorphous Germanium, Phys. Rev. B: Solid State, 1976, vol. 13, no. 2, pp. 787–804.

    CAS  Google Scholar 

  11. Hallohon, Y.R. and Beel, A., Techniques and Application of Plasma Chemistry, New York: Wiley, 1974.

    Google Scholar 

  12. Metaqqart, F.K., Plasma Chemistry in Electrical Discharges, Monograph 9: Topics in Inorganic Chemistry, Robinson, P.Z., Ed., New York: Elsevier, 1967.

    Google Scholar 

  13. Tauc, J., Grigorovici, R., et al., Optical Properties and Electronic Structure of Amorphous Germanium, J. Non-Cryst. Solids, 1966, vol. 15, no. 1, pp. 627–630.

    CAS  Google Scholar 

  14. Fang, C.J., Cruntz, K.J., Ley, L., and Cardona, M., The Hydrogen Content of a-Ge:H and a-Si:H As Determined by IR Spectroscopy, Gas Evolution and Nuclear Reaction Techniques, J. Non-Cryst. Solids, 1980, vol. 35, no. 1, pp. 255–259.

    Article  Google Scholar 

  15. Mott, N. and Davis, E., Electronic Processes in Non-Crystalline Materials, Oxford: Oxford Univ. Press, 1979, vol. 2.

    Google Scholar 

  16. Isakov, G.I. and Najafov, B.A., Optical Properties of Amorphous Films with Different Hydrogen Concentrations, Zh. Prikl. Spektrosk., 2005, vol. 72, no. 3, pp. 374–376.

    Google Scholar 

  17. Brodsky, M.M., Cardona, M., and Cuomo, J.J., Infrared and Raman Spectra of the Silicon Prepared by Glow Discharge and Sputtering, Phys. Rev. B: Solid State, 1977, vol. 6, no. 8, pp. 3556–3581.

    Google Scholar 

  18. Najafov, B.A. Electrical Properties of Amorphous Solid-Solution Films, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2000, vol. 34, no. 11, pp. 1383–1385.

    Google Scholar 

  19. Lewis, A., Evidence for the Mott Model of Hopping Conduction in the Anneal Stable State of Amorphous Silicon, Phys. Rev. Lett., 1978, vol. 29, no. 23, pp. 1555–1558.

    Article  Google Scholar 

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Authors and Affiliations

  1. Institute of Radiation Research, Academy of Sciences of Azerbaijan, pr. Javida 31a, Baku, AZ1143, Azerbaijan

    B. A. Najafov

  2. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan

    G. I. Isakov

Authors
  1. B. A. Najafov
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  2. G. I. Isakov
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Correspondence to B. A. Najafov.

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Original Russian Text © B.A. Najafov, G.I. Isakov, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 6, pp. 702–708.

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Najafov, B.A., Isakov, G.I. Optical and electrical properties of amorphous Si1 − x C x :H films. Inorg Mater 46, 624–630 (2010). https://doi.org/10.1134/S0020168510060129

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  • DOI: https://doi.org/10.1134/S0020168510060129

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