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Structure and electrical conductivity of selenium-ion-implanted CdSe films

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Inorganic Materials Aims and scope

Abstract

We have studied the effect of annealing on the spectral and photoelectric properties of polycrystalline CdSe films produced by thermal evaporation and implanted with Se ions to doses from 5 × 1015 to 5 × 1016 cm−2. The results demonstrate that, when cadmium vacancies and selenium interstitials are major defects, annealing leads to the formation of microcrystalline two-phase layers during recrystallization, which have low p-type conductivity due to a shallow acceptor at E v + 0.04–0.05 eV, related to interstitial selenium.

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Authors and Affiliations

  1. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani

  2. State Research and Design Institute for the Rare-Metals Industry, Bol’shoi Tolmachevskii per. 5, Moscow, 119017, Russia

    B. N. Levonovich

  3. Mendeleev University of Chemical Technology, Miusskaya pl. 9, Moscow, 125047, Russia

    I. Kh. Avetisov

Authors
  1. A. N. Georgobiani
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  2. B. N. Levonovich
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  3. I. Kh. Avetisov
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Correspondence to A. N. Georgobiani.

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Original Russian Text © A.N. Georgobiani, B.N. Levonovich, I.Kh. Avetisov, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 6, pp. 674–677.

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Georgobiani, A.N., Levonovich, B.N. & Avetisov, I.K. Structure and electrical conductivity of selenium-ion-implanted CdSe films. Inorg Mater 46, 598–600 (2010). https://doi.org/10.1134/S0020168510060063

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  • DOI: https://doi.org/10.1134/S0020168510060063

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