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Strength degradation of silicon diffusion-doped with gold

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Abstract

Diffusion doping with gold is shown to reduce the microhardness of silicon single crystals. Oxygen precipitation suppresses this process because diffusing interstitial gold atoms, Aui, interact with oxygen and become captured by growing precipitates.

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Authors and Affiliations

  1. Belarussian State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus

    D. I. Brinkevich & V. S. Prosolovich

  2. Polotsk State University, ul. Blokhina 29, Novopolotsk, 211440, Belarus

    S. A. Vabishchevich & N. V. Vabishchevich

Authors
  1. D. I. Brinkevich
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  2. S. A. Vabishchevich
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  3. N. V. Vabishchevich
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  4. V. S. Prosolovich
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Correspondence to D. I. Brinkevich.

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Original Russian Text © D.I. Brinkevich, S.A. Vabishchevich, N.V. Vabishchevich, V.S. Prosolovich, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 4, pp. 389–392.

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Brinkevich, D.I., Vabishchevich, S.A., Vabishchevich, N.V. et al. Strength degradation of silicon diffusion-doped with gold. Inorg Mater 45, 343–346 (2009). https://doi.org/10.1134/S0020168509040013

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  • DOI: https://doi.org/10.1134/S0020168509040013

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