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Effect of NiO nanolayers on the thermal oxidation of GaAs

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Abstract

It is shown that nickel oxide deposited on GaAs insures rapid growth of oxide layers at low oxidation temperatures, inhibits the degradation of the substrate surface, and contributes to the binding of the volatile component with the formation of As2O3, As2O5, and nickel arsenates. A reaction scheme for the thermal oxidation of NiO(40 and 25 nm)/GaAs heterostructures is proposed which takes into account reactions at the oxide-semiconductor interface.

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References

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    E. V. Tomina, A. S. Sukhochev, E. K. Meshcheryakova & I. Ya. Mittova

Authors
  1. E. V. Tomina
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  2. A. S. Sukhochev
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  3. E. K. Meshcheryakova
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  4. I. Ya. Mittova
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Additional information

Original Russian Text © E.V. Tomina, A.S. Sukhochev, E.K. Meshcheryakova, I.Ya. Mittova, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 5, pp. 593–599.

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Tomina, E.V., Sukhochev, A.S., Meshcheryakova, E.K. et al. Effect of NiO nanolayers on the thermal oxidation of GaAs. Inorg Mater 43, 520–525 (2007). https://doi.org/10.1134/S0020168507050159

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  • DOI: https://doi.org/10.1134/S0020168507050159

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