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Segregation of aluminum and indium impurities in Ge1−x Si x crystals

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Abstract

Crystals of aluminum-and indium-doped Ge1−x Si x (0<x≤0.25) solid solutions with a silicon concentration increasing linearly along the growth direction have been grown by a modified Bridgman method with the use of germanium seeds and continuous feeding of the melt with silicon. Using the Pfann approximation and virtual crystal model for solid solutions, we have evaluated the impurity distribution in melt-grown binary crystals with a linear axial composition profile. The aluminum and indium concentration profiles extracted from Hall effect measurements indicate that the segregation coefficients of these impurities in Ge1−x Si x crystals are linear functions of the solid-solution composition.

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan

    Z. M. Zakhrabekova, V. K. Kyazimova & G. Kh. Azhdarov

  2. Ganja State University, pr. shakha Ismaila Khatai 187, Ganja, AZ1000, Azerbaijan

    Z. M. Zeinalov

Authors
  1. Z. M. Zakhrabekova
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  2. Z. M. Zeinalov
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  3. V. K. Kyazimova
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  4. G. Kh. Azhdarov
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Original Russian Text © Z.M. Zakhrabekova, Z.M. Zeinalov, V.K. Kyazimova, G.Kh. Azhdarov, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 1, pp. 5–9.

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Zakhrabekova, Z.M., Zeinalov, Z.M., Kyazimova, V.K. et al. Segregation of aluminum and indium impurities in Ge1−x Si x crystals. Inorg Mater 43, 3–7 (2007). https://doi.org/10.1134/S0020168507010025

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  • DOI: https://doi.org/10.1134/S0020168507010025

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