Abstract
We have studied the effect of hydrogenation on the electrical properties of InSe layered crystals and their anisotropy. Hydrogenation has been shown to reduce the in-plane electron mobility in InSe and to raise its in-plane electrical conductivity and electron concentration. The decrease in anisotropy upon InSe hydrogenation is due to the marked rise in out-of-plane conductivity.
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Original Russian Text © A.V. Zaslonkin, V.M. Kaminskii, Z.D. Kovalyuk, I.V. Mintyanskii, M.V. Tovarnitskii, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 12, pp. 1434–1436.
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Zaslonkin, A.V., Kaminskii, V.M., Kovalyuk, Z.D. et al. Electrical properties of hydrogenated InSe crystals. Inorg Mater 42, 1308–1310 (2006). https://doi.org/10.1134/S0020168506120053
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DOI: https://doi.org/10.1134/S0020168506120053