Abstract
ZnO nanorods have been grown on (111) Si substrates by chemical vapor deposition in a horizontal reactor, with no catalyst. The nanorods grown far from the outlet end of the reactor are larger in size, have a higher structural perfection, and exhibit more efficient room-temperature edge luminescence in comparison with the nanorods grown at the outlet end. The low-temperature cathodoluminescence spectrum of the nanorods also depends on their position in the reactor during growth, which is interpreted in terms of the density of native defects. The nanorods exhibit room-temperature stimulated emission in the excitonic spectral region.
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Original Russian Text © A.N. Georgobiani, A.N. Gruzintsev, V.I. Kozlovskii, Z.I. Makovei, A.N. Red’kin, Ya.K. Skasyrskii, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 7, pp. 830–835.
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Georgobiani, A.N., Gruzintsev, A.N., Kozlovskii, V.I. et al. Luminescence of ZnO nanorods grown by chemical vapor deposition on (111) Si substrates. Inorg Mater 42, 750–755 (2006). https://doi.org/10.1134/S0020168506070119
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DOI: https://doi.org/10.1134/S0020168506070119