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GaAsSb/GaAs quantum well growth by MOCVD hydride epitaxy with laser sputtering of antimony

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Abstract

A new method of obtaining quantum-size GaAs1−x Sbx (x⩽0.45) layers is proposed. The method consists in laser vaporization of solid metallic antimony near the substrate directly in the reactor. The antimony concentration is set by the antimony sputtering time with the arsine flux shut off. The polarization of the photoluminescence of the obtained layers indicates the formation of quantum wires. The heterostructures obtained are used to fabricate laser diodes.

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Authors and Affiliations

  1. Institute of Physics of Microstructures, Russian Academy of Sciences, 603600, Nizhnii Novgorod, Russia

    V. Ya. Aleshkin

  2. Scientific-Research Institute, Physicotechnical Institute of the State University, Russia

    S. A. Akhlestina, B. N. Zvonkov, N. B. Zvonkov, I. G. Malkina & E. A. Uskova

Authors
  1. V. Ya. Aleshkin
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  2. S. A. Akhlestina
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  3. B. N. Zvonkov
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  4. N. B. Zvonkov
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  5. I. G. Malkina
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  6. E. A. Uskova
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Additional information

Pis’ma Zh. Éksp. Teor. Fiz. 68, No. 1, 84–88 (10 July 1998)

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Aleshkin, V.Y., Akhlestina, S.A., Zvonkov, B.N. et al. GaAsSb/GaAs quantum well growth by MOCVD hydride epitaxy with laser sputtering of antimony. Jetp Lett. 68, 91–96 (1998). https://doi.org/10.1134/1.567826

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  • DOI: https://doi.org/10.1134/1.567826

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