Skip to main content
SpringerLink
Log in

Roughening of a Si(100) surface induced by the adsorption of oxygen near the solid-oxide nucleation threshold

  • Solids
  • Published:
Journal of Experimental and Theoretical Physics Aims and scope Submit manuscript

Abstract

An investigation of the processes on a Si(100) surface interacting with oxygen near the solid-oxide nucleation threshold using x-ray photoelectron spectroscopy and atomic-force microscopy is described. The nucleation threshold is the boundary between the temperature and oxygen pressure regions where a phase transition with the formation of a submonolayer oxide and a roughening transition caused by oxygen adsorption occur. Near the nucleation threshold, either a random rough relief or a quasiperiodic structure is formed on a surface coated with chemisorbed oxygen. The formation of the rough relief due to oxygen adsorption has been interpreted within the theory of phase transitions as a result of vacancy clustering. A model that allows one to describe the dynamics of processes on the surface near the nucleation threshold in qualitative and in some cases in quantitative terms has been suggested.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Wurm, R. Kliese, Y. Hong et al., Phys. Rev. B 50, 1567 (1994).

    Article  ADS  Google Scholar 

  2. J. V. Seiple and J. P. Pelz, Phys. Rev. Lett. 73, 999 (1994).

    Article  ADS  Google Scholar 

  3. A. Feltz, U. Memmert, and R. J. Behm, Surf. Sci. 314, 34 (1994).

    Article  Google Scholar 

  4. Y. Ono, M. Tabe, and H. Kageshina, Phys. Rev. B 48, 14 291 (1993).

  5. N. C. Lu, E. P. Gusev, E. Garfunkel et al., Surf. Sci. Technol. 10, 215 (1995).

    Google Scholar 

  6. T. Engel, Surf. Sci. Rep. 18, 94 (1993).

    Article  MathSciNet  Google Scholar 

  7. Y. Enta, Y. Takegawa, T. Suemitsi et al., Appl. Surf. Sci. 100/101, 449 (1996).

    Article  Google Scholar 

  8. C. J. Sofield and A. M. Stoneham, Semicond. Sci. Technol. 10, 215 (1995).

    Article  ADS  Google Scholar 

  9. M. Niwa, T. Kouzaki, M. Udagawa et al., Jpn. J. Appl. Phys. 33, 388 (1994).

    Google Scholar 

  10. Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards Atomic-Scale Understanding (Technical Program and Abstracts, Advance Research Workshop Supported by NATO Science Affairs Division), St. Petersburg, Russia (1997).

  11. F. Lutz, L. Kubler, and J. L. Bischoff, Phys. Rev. B 40, 11 747 (1989).

  12. V. D. Borman, E. P. Gusev, Yu. Yu. Lebedinski, and V. I. Troyan, Phys. Rev. B 49, 5415 (1994).

    Article  ADS  Google Scholar 

  13. G. Hollinger and F. J. Himpsel, Phys. Rev. B 28, 3651 (1983).

    Article  ADS  Google Scholar 

  14. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi et al., Phys. Rev. B 38, 6084 (1988).

    ADS  Google Scholar 

  15. J. R. Engstrom, D. J. Bonser, and T. Engel, Surf. Sci. 268, 238 (1992).

    Article  Google Scholar 

  16. V. D. Borman, E. P. Gusev, Yu. N. Devyatko et al., Poverkhnost’ 8, 22 (1990).

    Google Scholar 

  17. Ph. Avouris and D. Cahill, Ultramicroscopy 42–44, 838 (1992).

    Google Scholar 

  18. Ph. Avouris, In-Whan Lyo, and F. Bozso, J. Vac. Sci. Technol. B 9, 424 (1991).

    Article  Google Scholar 

  19. K. Ohkubo, Y. Igari, S. Tomoda et al., Surf. Sci. 260, 44 (1992).

    Article  Google Scholar 

  20. V. D. Borman, E. P. Gusev, Yu. N. Devyatko, V. N. Tronin, and V. I. Troyan, Surf. Sci. Lett. 301, L239 (1994).

    Article  Google Scholar 

  21. Yu. N. Devyatko and V. N. Tronin, Phys. Scr. 41, 355 (1990).

    ADS  Google Scholar 

  22. F. M. Ross, J. M. Gibson, and R. D. Twesten, Surf. Sci. 310, 243 (1994).

    Article  Google Scholar 

  23. V. D. Borman, O. V. Tapinskaya, V. N. Tronin, and V. I. Troyan, Phys. Low-Dimens. Struct. 6, 7 (1994).

    Google Scholar 

  24. V. D. Borman, O. V. Tapinskaya, V. N. Tronin, and V. I. Troyan, JETP Lett. 60, 718 (1994).

    ADS  Google Scholar 

  25. F. Lutz, J. L. Bischoff, L. Kubler, and D. Bolmont, Phys. Rev. B 40, 10 356 (1989).

    Google Scholar 

  26. M. Tabe, T. T. Chiang, I. Lindau, and W. E. Spicer, Phys. Rev. B 34, 2706 (1986).

    Article  ADS  Google Scholar 

  27. H. Ibach, H. D. Bruchmann, and H. Wagner, Appl. Phys. A 29, 113 (1982).

    Article  Google Scholar 

  28. P. J. Grunthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).

    Article  ADS  Google Scholar 

  29. G. Hollinger, J. F. Morar, F. J. Himpsel et al., Surf. Sci. 168, 609 (1986).

    Google Scholar 

  30. J. J. Lander and J. Morrison, J. Appl. Phys. 33, 2089 (1962).

    Article  Google Scholar 

  31. F. W. Smith and G. Ghidini, J. Electrochem. Soc. 129, 1300 (1982).

    Google Scholar 

  32. M. P. D’Evelyn, M. M. Nelson, and T. Engel, Surf. Sci. 186, 75 (1987).

    Google Scholar 

  33. F. M. Leibsle, A. Samsavar, and T. C. Chiang, Phys. Rev. B 38, 5780 (1988).

    Article  ADS  Google Scholar 

  34. P. Gupta, C. H. Mak, P. A. Coon, and S. M. George, Phys. Rev. B 40, 7739 (1989).

    Article  ADS  Google Scholar 

  35. Ya. E. Geguzin and Yu. S. Kaganovskii, Diffusion Processes on Crystal Surfaces [in Russian], Énergoatomizdat, Moscow (1984).

    Google Scholar 

  36. A. Pimpinelli and J. Villain, Physica A 204, 521 (1994).

    Article  ADS  Google Scholar 

  37. V. S. Vavilov, V. F. Kiselev, and V. N. Mukashev, Defects in Silicon and on its Surface [in Russian], Nauka, Moscow (1990).

    Google Scholar 

  38. A. N. Tikhonov and A. A. Samarskii, Equations of Mathematical Physics [in Russian], Nauka, Moscow (1977).

    Google Scholar 

  39. L. D. Landau and E. M. Lifshitz, Statistical Physics, Pergamon Press, Oxford-New York (1980).

    Google Scholar 

  40. Yu. N. Devyatko and V. N. Tronin, Zh. Éksp. Teor. Fiz. 98, 1570 (1990) [Sov. Phys. JETP 71, 880 (1990)].

    ADS  Google Scholar 

  41. V. P. Skripov and A. V. Skripov, Usp. Fiz. Nauk 128, 193 (1979) [Sov. Phys. Usp. 22, 389 (1979)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Moscow Institute of Engineering Physics, 115409, Moscow, Russia

    V. D. Borman, Yu. Yu. Lebedinskii & V. I. Troyan

Authors
  1. V. D. Borman
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. Yu. Lebedinskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. I. Troyan
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Zh. Éksp. Teor. Fiz. 114, 239–262 (July 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Borman, V.D., Lebedinskii, Y.Y. & Troyan, V.I. Roughening of a Si(100) surface induced by the adsorption of oxygen near the solid-oxide nucleation threshold. J. Exp. Theor. Phys. 87, 133–145 (1998). https://doi.org/10.1134/1.558634

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.558634

Keywords

Search

Navigation