Abstract
This paper is a theoretical analysis of the noise produced by a single-mode semiconductor laser. We allow for spectral hole-burning in the gain line and for the nonlinear dependence of the carrier spontaneous recombination rate on the number of carriers in the active area. We show that these processes do not inhibit the squeezing of the outgoing photon flux noise below the shot noise level at high pump currents but that the degree of squeezing decreases considerably. Finally, we establish that these processes also considerably narrow the squeezing bandwidth.
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Zh. Éksp. Teor. Fiz. 112, 429–440 (August 1997)
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Kozlov, V.V., Trifonov, A.S. Noise squeezing in a semiconductor laser with an inhomogeneously broadened gain line. J. Exp. Theor. Phys. 85, 234–240 (1997). https://doi.org/10.1134/1.558269
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DOI: https://doi.org/10.1134/1.558269