Abstract
The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ∼20 K. The Coulomb energy is found to be ΔE c = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 82, No. 8, 2005, pp. 585–590.
Original Russian Text Copyright © 2005 by Khanin, Vdovin, Dubonos, Levin, Eaves, Henini.
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Khanin, Y.N., Vdovin, E.E., Dubonos, S.V. et al. Coulomb oscillations of the current through spin-nondegenerate p states of InAs quantum dots. Jetp Lett. 82, 526–531 (2005). https://doi.org/10.1134/1.2150874
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DOI: https://doi.org/10.1134/1.2150874