Abstract
The effect of double scattering of Ar+ ions from the surface of C, Al, Si, Ti, Ge, and In targets is studied by the method of slow scattered ion spectroscopy. Based on this effect, a technique to estimate the cluster phase of germanium atoms in the Si1−x Gex solid solution with a small (5–10%) content of germanium is suggested.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 75, No. 12, 2005, pp. 82–88.
Original Russian Text Copyright © 2005 by Babenko, Mikoushkin, Shergin.
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Babenko, P.Y., Mikoushkin, V.M. & Shergin, A.P. Double scattering effect and its application in Si1−x Gex solid solution diagnosis. Tech. Phys. 50, 1617–1622 (2005). https://doi.org/10.1134/1.2148564
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DOI: https://doi.org/10.1134/1.2148564