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Relaxor properties and the mechanism of conduction in TlInS2 crystals exposed to gamma irradiation

  • Magnetism and Ferroelectricity
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Abstract

The density of states at the energy levels associated with radiation-induced defects, the localization length of a defect center, and the hopping distance of charge carriers are determined in a TlInS2 crystal. It is demonstrated that, by varying the dose of gamma irradiation, it is possible to control the dielectric properties of ferroelectrics and to attain a stable relaxor state. In the temperature range of existence of this state, charge carriers execute tunneling from electron levels in the band gap through potential barriers created by an incommensurate superstructure of the TlInS2 crystal.

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Authors and Affiliations

  1. Institute for Radiation Problems, National Academy of Sciences of Azerbaijan, Baku, AZ 1143, Azerbaijan

    R. M. Sardarly, O. A. Samedov, I. Sh. Sadykhov, A. I. Nadzhafov & F. T. Salmanov

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  1. R. M. Sardarly
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  2. O. A. Samedov
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  3. I. Sh. Sadykhov
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  4. A. I. Nadzhafov
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  5. F. T. Salmanov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 9, 2005, pp. 1665–1669.

Original Russian Text Copyright © 2005 by Sardarly, Samedov, Sadykhov, Nadzhafov, Salmanov.

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Sardarly, R.M., Samedov, O.A., Sadykhov, I.S. et al. Relaxor properties and the mechanism of conduction in TlInS2 crystals exposed to gamma irradiation. Phys. Solid State 47, 1729–1733 (2005). https://doi.org/10.1134/1.2045359

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  • DOI: https://doi.org/10.1134/1.2045359

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