Abstract
The effect of hydrostatic pressure to 10 kbar on the conductivity of γ-irradiated chain TlInSe2 single crystals with a resistivity of ~108 Ω cm is studied. It is found that the observed conductivity anomalies of TlInSe2 samples irradiated at doses of D < 100 krad and D > 100 krad are associated with the ordered transformation of defects including interstitial cations and anions. The nature of the anomalous change and pressure dependences of the resistivity σ(P) in the irradiated samples suggest that pressure causes local energy levels due to macroscopic clusters of radiation-induced defects, with the result that the Fermi-level energy and carrier concentration change.
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Madatov, R.S., Gasimov, S.G., Babayev, S.S. et al. Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe2 Single Crystals under Hydrostatic Pressure. Semiconductors 54, 1180–1184 (2020). https://doi.org/10.1134/S1063782620100206
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DOI: https://doi.org/10.1134/S1063782620100206