Abstract
The characteristics of non-alloy Cr/Au ohmic contacts in planar beam-lead GaAs p-i-n diodes have been studied. The room-temperature reduced contact resistance in the structures studied was 2 × 10−6 Ω cm2. The obtained parameters of p-i-n diodes allow these devices to be used as limiters in radar protection systems.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 14, 2005, pp. 1–6.
Original Russian Text Copyright © 2005 by Aleksandrov, Volkov, Ivanova, Kuz’michev, Solov’ev.
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Aleksandrov, S.E., Volkov, V.V., Ivanova, V.P. et al. Non-alloy Cr/Au Ohmic contacts in the technology of planar beam-lead GaAs p-i-n diodes. Tech. Phys. Lett. 31, 581–583 (2005). https://doi.org/10.1134/1.2001060
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DOI: https://doi.org/10.1134/1.2001060