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The generation-recombination mechanism of charge transport in a thin-film CdS/CdTe heterojunction

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

An n-CdS/p-CdTe heterostructure is studied. The heterostructure is obtained using the sequential growth of CdS and CdTe layers by electrochemical deposition and closed-space sublimation, respectively. The measured current-voltage characteristics are interpreted in the context of the Sah-Noyce-Shokley generation-recombination model for the depletion layer of a diode structure. The theory quantitatively agrees with the experimental results.

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Authors and Affiliations

  1. Chernovtsy National University, Chernovtsy, 58012, Ukraine

    L. A. Kosyachenko, V. V. Motushchuk & V. M. Sclyarchuk

  2. Centro de Investigacion en Energia-UNAM, 62580, Temixco, Morelos, Mexico

    X. Mathew

Authors
  1. L. A. Kosyachenko
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  2. X. Mathew
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  3. V. V. Motushchuk
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  4. V. M. Sclyarchuk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 5, 2005, pp. 569–572.

Original Russian Text Copyright © 2005 by Kosyachenko, Mathew, Motushchuk, Sclyarchuk.

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Kosyachenko, L.A., Mathew, X., Motushchuk, V.V. et al. The generation-recombination mechanism of charge transport in a thin-film CdS/CdTe heterojunction. Semiconductors 39, 539–542 (2005). https://doi.org/10.1134/1.1923561

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  • DOI: https://doi.org/10.1134/1.1923561

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