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The effect of thickness fluctuations on the static electrical conductivity of a semiconductor quantum wire

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Abstract

Expressions for the relaxation time, electron mobility, and static electrical conductivity along a semiconductor quantum wire are derived in relation to a random field of Gaussian fluctuations in the wire’s thickness. In the case of nondegenerate statistics for charge carriers at relatively low temperatures (T), electron mobility is given by u n ∝ T 1/2. In the limiting case of a strong magnetic field H directed along the wire, the factor H −1/2 appears in the mobility expression. It is shown that the considered mechanism of charge-carrier relaxation is important for the electrical conductivity of a fairly thin and pure quantum wire at low temperatures.

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References

  1. Nanotechnology, Ed. by G. Tim (Springer, New York, 1999).

    Google Scholar 

  2. Y. Imry, Introduction to Mesoscopic Physics (Oxford Univ. Press, Oxford, 2002).

    Google Scholar 

  3. N. A. Poklonskii, E. F. Kislyakov, and S. A. Vyrko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 735 (2003) [Semiconductors 37, 710 (2003)].

    Google Scholar 

  4. H. Bruus, K. Flensberg, and H. Smith, Phys. Rev. B 48, 11144 (1993).

    Google Scholar 

  5. H. Smith and H. Højgaard, Transport Phenomena (Oxford Univ. Press, Oxford, 1989).

    Google Scholar 

  6. A. I. Anselm, Introduction to Semiconductor Theory (Nauka, Moscow, 1978; Prentice Hall, Englewood Cliffs, 1981).

    Google Scholar 

  7. B. K. Ridley, Quantum Processes in Semiconductors, 4th ed. (Oxford Univ. Press, Oxford, 1999; Mir, Moscow, 1986).

    Google Scholar 

  8. A. P. Prudnikov, Yu. A. Brychkov, and O. I. Marichev, Integrals and Series, Vol. 1: Elementary Functions (Nauka, Moscow, 1981; Gordon and Breach, New York, 1986).

    Google Scholar 

  9. J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).

    Article  ADS  Google Scholar 

  10. E. E. Mendez, P. J. Price, and M. Heiblum, Appl. Phys. Lett. 45, 294 (1984).

    Article  ADS  Google Scholar 

  11. P. K. Basu and P. Ray, Phys. Rev. B 44, 1844 (1991).

    ADS  Google Scholar 

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Authors and Affiliations

  1. Stefanyk Precarpathian University, Ivano-Frankivsk, 76000, Ukraine

    M. A. Ruvinskii & B. M. Ruvinskii

Authors
  1. M. A. Ruvinskii
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  2. B. M. Ruvinskii
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 2, 2005, pp. 247–250.

Original Russian Text Copyright © 2005 by M. Ruvinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), B. Ruvinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Ruvinskii, M.A., Ruvinskii, B.M. The effect of thickness fluctuations on the static electrical conductivity of a semiconductor quantum wire. Semiconductors 39, 231–234 (2005). https://doi.org/10.1134/1.1864205

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  • DOI: https://doi.org/10.1134/1.1864205

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