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Recombination at mixed-valence impurity centers in PbTe(Ga) epitaxial layers

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

The photoconductivity kinetics in PbTe(Ga) epitaxial films prepared by the hot-wall method is studied. The recombination of nonequilibrium photoexcited electrons at low temperatures was found to proceed in two stages, with a period of relatively fast relaxation followed by delayed photoconductivity. The temperature at which delayed photoconductivity appears increases with decreasing film thickness. The relaxation rate over the period of fast relaxation depends on film thickness and is the lowest in the thinnest layers. In semi-insulating films, photoconductivity is always positive, whereas in samples with lower electrical resistivity positive and negative photoconductivities are observed to coexist. The data obtained are discussed in terms of a model in which the impurity gallium atom can be in more than one charged state.

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Authors and Affiliations

  1. Moscow State University, Vorob’evy gory, Moscow, 119992, Russia

    B. A. Akimov, V. A. Bogoyavlenskii, V. A. Vasil’kov, L. I. Ryabova & D. R. Khokhlov

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  1. B. A. Akimov
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  2. V. A. Bogoyavlenskii
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  3. V. A. Vasil’kov
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  4. L. I. Ryabova
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  5. D. R. Khokhlov
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 160–163.

Original Russian Text Copyright © 2005 by Akimov, Bogoyavlenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Vasil’kov, Ryabova, Khokhlov.

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Akimov, B.A., Bogoyavlenskii, V.A., Vasil’kov, V.A. et al. Recombination at mixed-valence impurity centers in PbTe(Ga) epitaxial layers. Phys. Solid State 47, 166–169 (2005). https://doi.org/10.1134/1.1853470

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  • DOI: https://doi.org/10.1134/1.1853470

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