Abstract
The density of crystal lattice defects in Si: Er layers grown through sublimation molecular-beam epitaxy at temperatures ranging from 520 to 580°C is investigated by a metallographic method, and the Hall mobility of electrons in these layers is determined. It is found that the introduction of erbium at a concentration of up to ∼5 × 1018 cm−3 into silicon layers is not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 99–101.
Original Russian Text Copyright © 2005 by Kuznetsov, Rubtsova, Shabanov, Kasatkin, Sedova, Maksimov, Krasil’nik, Demidov.
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Kuznetsov, V.P., Rubtsova, R.A., Shabanov, V.N. et al. Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy. Phys. Solid State 47, 102–105 (2005). https://doi.org/10.1134/1.1853455
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DOI: https://doi.org/10.1134/1.1853455