Abstract
Multilayer Si/Ge nanostructures with germanium layers of different thicknesses are grown by molecular-beam epitaxy at low temperatures (<350°C) and studied using photoluminescence and atomic force microscopy. It is found that the germanium layer undergoes a morphological transformation when its thickness becomes equal to approximately five monolayers: an island relief transforms into a smooth undulating relief.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 70–73.
Original Russian Text Copyright © 2005 by Burbaev, Kurbatov, Rzaev, Pogosov, Sibel’din, Tsvetkov, Lichtenberger, Schäffler, Leitao, Sobolev, Carmo.
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Burbaev, T.M., Kurbatov, V.A., Rzaev, M.M. et al. Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures. Phys. Solid State 47, 71–75 (2005). https://doi.org/10.1134/1.1853448
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DOI: https://doi.org/10.1134/1.1853448