Skip to main content
SpringerLink
Log in

Influence of a predeposited Si1−x Gex layer on the growth of self-assembled SiGe/Si(001) islands

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

The growth of self-assembled Ge(Si) islands on a strained Si1−xGex layer (0% < x < 20%) is studied. The size and the surface density of islands are found to increase with Ge content in the Si1−xGex layer. The increased surface density is related to augmentation of the surface roughness after deposition of the SiGe layer. The enlargement of islands is accounted for by the decrease of the wetting layer in thickness due to the additional elastic energy accumulated in the SiGe layer and to enhanced Si diffusion from the Si1−xGex layer into the islands. The increase in the fraction of the surface occupied by islands leads to a greater order in the island arrangement.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. Voigtländer, Surf. Sci. Rep. 43, 127 (2001).

    Article  Google Scholar 

  2. U. Denker, M. Stoffel, O. G. Schmidt, and H. Sigg, Appl. Phys. Lett. 82, 454 (2003).

    Article  ADS  Google Scholar 

  3. B. Cho, T. Schwartz-Selinger, K. Ohmori, and D. G. Cahill, Phys. Rev. B 66, 195 407 (2002).

    Google Scholar 

  4. P. Sutter and M. G. Lagally, Phys. Rev. Lett. 84, 4637 (2000).

    Article  ADS  Google Scholar 

  5. N. V. Vostokov, S. A. Gusev, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Yakhimchuk, N. Usami, and M. Ya. Valakh, Phys. Low-Dimens. Semicond. Struct., No. 3/4, 295 (2001).

  6. M. Meixner, E. Schöll, M. Schmidbauer, H. Raidt, and R. Köler, Phys. Rev. B 64, 245 307 (2001).

    Google Scholar 

  7. Christian Teichert, Phys. Rep. 365, 335 (2002).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov & A. N. Yablonskii

  2. Max-Planck-Institut für Festkörperforschung, Stuttgart, D-70569, Germany

    M. Stoffel & U. Denker

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    O. G. Schmidt, O. M. Gorbenko & I. P. Soshnikov

Authors
  1. N. V. Vostokov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. N. Drozdov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Z. F. Krasil’nik
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. N. Lobanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. V. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. N. Yablonskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. M. Stoffel
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. U. Denker
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. O. G. Schmidt
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. O. M. Gorbenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. I. P. Soshnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 29–32.

Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Lobanov, Novikov, Yablonski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Stoffel, Denker, Schmidt, Gorbenko, Soshnikov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vostokov, N.V., Drozdov, Y.N., Krasil’nik, Z.F. et al. Influence of a predeposited Si1−x Gex layer on the growth of self-assembled SiGe/Si(001) islands. Phys. Solid State 47, 26–29 (2005). https://doi.org/10.1134/1.1853437

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1853437

Keywords

Search

Navigation