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Photoluminescence of nanocrystalline silicon formed by rare-gas ion implantation

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
  • Published:
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Abstract

A new method is suggested for fabricating nanocrystalline silicon by using high-dose

irradiation with rare-gas ions. In this case, a nanostructure is formed due to silicon self-assembling on the interface between amorphous layer and crystalline substrate. Two bands, at 720 and 930 nm, are found in the photoluminescence spectrum. These bands possibly originate from the quantum confinement effects in nanocrystals and may also be related to the regions of disordered silicon outside the amorphous layer containing nanocrystals. The intensity of the photoluminescence signal is studied as a function of duration of HF etching of samples and their subsequent exposure to atmosphere. The influence of thermal annealing on the photoluminescence spectrum is also studied.

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Authors and Affiliations

  1. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    A. A. Ezhevskii, M. Yu. Lebedev & S. V. Morozov

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  1. A. A. Ezhevskii
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  2. M. Yu. Lebedev
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  3. S. V. Morozov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 22–25.

Original Russian Text Copyright © 2005 by Ezhevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Lebedev, Morozov.

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Ezhevskii, A.A., Lebedev, M.Y. & Morozov, S.V. Photoluminescence of nanocrystalline silicon formed by rare-gas ion implantation. Phys. Solid State 47, 18–21 (2005). https://doi.org/10.1134/1.1853435

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  • DOI: https://doi.org/10.1134/1.1853435

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