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Influence of the insulator thickness inhomogeneity on the current-voltage characteristics of tunneling MOS structures

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Abstract

The current-voltage (I-V) characteristics of Al/SiO2/Si metal-oxide-semiconductor (MOS) tunnel structures have been modeled with allowance for the lateral inhomogeneity of the oxide layer thickness. It is established that considerable dispersion of the insulator thickness modifies the I-V curve shape. Values of the current dispersion are determined in a broad range of linear dimensions of the MOS device. The modeling has been performed using the most recent data on the parameters of tunneling, which provides for quantitative accuracy of the results.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. E. Tyaginov, M. I. Vexler, A. F. Shulekin & I. V. Grekhov

Authors
  1. S. E. Tyaginov
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  2. M. I. Vexler
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  3. A. F. Shulekin
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  4. I. V. Grekhov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 24, 2004, pp. 7–11.

Original Russian Text Copyright © 2004 by Tyaginov, Vexler, Shulekin, Grekhov.

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Tyaginov, S.E., Vexler, M.I., Shulekin, A.F. et al. Influence of the insulator thickness inhomogeneity on the current-voltage characteristics of tunneling MOS structures. Tech. Phys. Lett. 30, 1020–1022 (2004). https://doi.org/10.1134/1.1846845

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  • DOI: https://doi.org/10.1134/1.1846845

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