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Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Electrical and photoelectric properties of Al-n-Si-SnO2:Cu-Ag heterostructures are studied. It is established that the charge transport in this structure is caused by double injection of charge carriers in the diffusion approximation. A 35% increase in the photocurrent is observed after exposing the heterostructure to a mixture of 1% of H2S with N2. The initial values of the photocurrent are recovered if the heterostructure is subsequently exposed to air. The rise and decay times of the photosignal are relatively short: 1 and 3 min, respectively.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, Yu. G. Malinin & Kh. M. Salikhov

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  1. S. V. Slobodchikov
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  2. E. V. Russu
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  3. É. V. Ivanov
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  4. Yu. G. Malinin
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  5. Kh. M. Salikhov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1426–1428.

Original Russian Text Copyright © 2004 by Slobodchikov, Russu, Ivanov, Malinin, Salikhov.

Deceased.

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Slobodchikov, S.V., Russu, E.V., Ivanov, É.V. et al. Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures. Semiconductors 38, 1381–1383 (2004). https://doi.org/10.1134/1.1836056

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  • DOI: https://doi.org/10.1134/1.1836056

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