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Hg1−x−y−z CdxMnyZnzTe: A new alternative to Hg1−x CdxTe

  • Electronic and Optical Properties of Semiconductors
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Abstract

The results of studying the most important energy-band parameters of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the parameters of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14 µm.

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Authors and Affiliations

  1. Fed’kovich National University, Chernivtsy, 58012, Ukraine

    I. N. Gorbatyuk, A. V. Markov, S. É. Ostapov & I. M. Rarenko

Authors
  1. I. N. Gorbatyuk
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  2. A. V. Markov
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  3. S. É. Ostapov
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  4. I. M. Rarenko
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1414–1418.

Original Russian Text Copyright © 2004 by Gorbatyuk, Markov, Ostapov, Rarenko.

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Gorbatyuk, I.N., Markov, A.V., Ostapov, S.É. et al. Hg1−x−y−z CdxMnyZnzTe: A new alternative to Hg1−x CdxTe. Semiconductors 38, 1369–1373 (2004). https://doi.org/10.1134/1.1836053

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  • DOI: https://doi.org/10.1134/1.1836053

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