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A photoelectric study of charge-carrier collection in CdZnTe-based detectors of x-ray and γ radiation

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A scheme of photoconductivity excitation in which an external electric field is parallel to the direction of the radiation penetration is considered. Spatial distribution of nonequilibrium electrons and the conditions for separation of electron-hole pairs (for the charge-carrier collection) are analyzed in relation to the value of the voltage applied to the crystal. A method for determining the electron lifetime from measurements of photoconductivity is suggested.

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Authors and Affiliations

  1. Chernovtsy National University, Chernovtsy, 58012, Ukraine

    L. A. Kosyachenko, E. L. Maslyanchuk, I. M. Rarenko & V. M. Sklyarchuk

Authors
  1. L. A. Kosyachenko
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  2. E. L. Maslyanchuk
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  3. I. M. Rarenko
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  4. V. M. Sklyarchuk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 8, 2004, pp. 1018–1023.

Original Russian Text Copyright © 2004 by Kosyachenko, Maslyanchuk, Rarenko, Sklyarchuk.

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Kosyachenko, L.A., Maslyanchuk, E.L., Rarenko, I.M. et al. A photoelectric study of charge-carrier collection in CdZnTe-based detectors of x-ray and γ radiation. Semiconductors 38, 981–986 (2004). https://doi.org/10.1134/1.1787123

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  • DOI: https://doi.org/10.1134/1.1787123

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