Abstract
The potential of the thermophotovoltaic conversion of thermal and solar energy to electricity using narrow-gap semiconductor photoconverters is shown. Liquid-phase epitaxy, metal-organic chemical vapor deposition, and Zn diffusion from the vapor phase are used to fabricate thermophotovoltaic converters based on GaSb and GaAs/Ge structures and characterized by increased values of both photocurrent and open-circuit voltage. This circumstance made it possible to obtain thermophotovoltaic cells that were based on the aforementioned structures and had efficiencies of 25% (GaSb) and 16% (GaAs/Ge) at a blackbody-radiation temperature of T=1473 K under the condition of 100% return of low-energy photons to the emitter.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 8, 2004, pp. 988–993.
Original Russian Text Copyright © 2004 by Khvostikov, Khvostikova, Gazaryan, Shvarts, Rumyantsev, Andreev.
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Khvostikov, V.P., Khvostikova, O.A., Gazaryan, P.Y. et al. Thermophotovoltaic cells for conversion of thermal radiation and concentrated sunlight to electricity. Semiconductors 38, 950–955 (2004). https://doi.org/10.1134/1.1787118
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DOI: https://doi.org/10.1134/1.1787118