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The effect of irradiation on the characteristics of MOS transistors

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Abstract

We have experimentally studied the effect of X-ray radiation on the parameters of MOS transistors. An analysis showed that correct evaluation of the density of surface states and the gate insulator charging by method of subthreshold current-voltage characteristics requires taking into account the planar inhomogeneity of a transistor. Some complication of the method is compensated by the increasing accuracy of determination of the surface parameters and the additional possibility of determining fluctuations of the surface potential.

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Authors and Affiliations

  1. Voronezh State University, Voronezh, Russia

    E. N. Bormontov, M. N. Levin, V. R. Gitlin, T. G. Men’shikova & A. A. Tatarintsev

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  1. E. N. Bormontov
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  2. M. N. Levin
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  3. V. R. Gitlin
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  4. T. G. Men’shikova
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  5. A. A. Tatarintsev
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 9, 2004, pp. 73–81.

Original Russian Text Copyright © 2004 by Bormontov, Levin, Gitlin, Men’shikova, Tatarintsev.

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Bormontov, E.N., Levin, M.N., Gitlin, V.R. et al. The effect of irradiation on the characteristics of MOS transistors. Tech. Phys. Lett. 30, 385–388 (2004). https://doi.org/10.1134/1.1760863

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  • DOI: https://doi.org/10.1134/1.1760863

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