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AlGaN/GaN HEMTs grown by ammonia MBE

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Abstract

The experimental technology and characteristics of domestic AlGaN/GaN high electron mobility transistors are described. The results show good prospects for further development.

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Authors and Affiliations

  1. “Svetlana-Elektronpribor” Corporation, St. Petersburg, Russia

    V. V. Volkov, V. P. Ivanova, Yu. S. Kuz’michev, S. A. Lermontov, Yu. V. Solov’ev, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel’skii, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov & V. P. Chalyi

  2. “Scientific and Technological Equipment” Corporation, St. Petersburg, Russia

    V. V. Volkov, V. P. Ivanova, Yu. S. Kuz’michev, S. A. Lermontov, Yu. V. Solov’ev, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel’skii, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov & V. P. Chalyi

Authors
  1. V. V. Volkov
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  2. V. P. Ivanova
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  3. Yu. S. Kuz’michev
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  4. S. A. Lermontov
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  5. Yu. V. Solov’ev
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  6. D. A. Baranov
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  7. A. P. Kaidash
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  8. D. M. Krasovitskii
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  9. M. V. Pavlenko
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  10. S. I. Petrov
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  11. Yu. V. Pogorel’skii
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  12. I. A. Sokolov
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  13. M. A. Sokolov
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  14. M. V. Stepanov
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  15. V. P. Chalyi
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Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 9, 2004, pp. 63–67.

Original Russian Text Copyright © 2004 by Volkov, Ivanova, Kuz’michev, Lermontov, Solov’ev, Baranov, Ka\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)dash, Krasovitski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Pavlenko, Petrov, Pogorel’ski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), I. Sokolov, M. Sokolov, Stepanov, Chaly\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Volkov, V.V., Ivanova, V.P., Kuz’michev, Y.S. et al. AlGaN/GaN HEMTs grown by ammonia MBE. Tech. Phys. Lett. 30, 380–382 (2004). https://doi.org/10.1134/1.1760861

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  • DOI: https://doi.org/10.1134/1.1760861

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