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Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

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Abstract

NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm−2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm−3 and the 2 DEG electron density recovered to 9.57 × 1012 cm−2.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 30010, Taiwan

    Franky J. Lumbantoruan, Yuen-Yee Wong,  Wei-Ching Huang, Hung-Wei Yu & Edward-Yi Chang

  2. International College of Semiconductor Technology, National Chiao-Tung University, Hsinchu, 30010, Taiwan

    Edward-Yi Chang

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  1. Franky J. Lumbantoruan
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  2. Yuen-Yee Wong
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  3. Wei-Ching Huang
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  5. Edward-Yi Chang
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Correspondence to Edward-Yi Chang.

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Lumbantoruan, F.J., Wong, YY., Huang, C. et al. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure. J. Electron. Mater. 46, 6104–6110 (2017). https://doi.org/10.1007/s11664-017-5550-5

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  • DOI: https://doi.org/10.1007/s11664-017-5550-5

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