Abstract
Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 4, 2004, pp. 749–753.
Original Russian Text Copyright © 2004 by Baraban, Konorov, Miloglyadova, Troshikhin.
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Baraban, A.P., Konorov, P.P., Miloglyadova, L.V. et al. Electroluminescence in SiO2 layers in various structures. Phys. Solid State 46, 770–774 (2004). https://doi.org/10.1134/1.1711472
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DOI: https://doi.org/10.1134/1.1711472