Abstract
In attempt to achieve strong surface doping of silicon with erbium, silicon was implanted with 250-keV argon ions through a thin erbium film deposited on the target surface. As a result, erbium recoil atoms were knocked out of the film and incorporated into the silicon substrate. In this way, silicon was doped with erbium atoms to a concentration of 5 × 1020 cm−3 within a depth slightly above 10 nm. For the formation of stable optically active ErO n complexes, oxygen recoil atoms were also incorporated into silicon. During the subsequent heat treatment, about half of the implanted erbium atoms segregated in the surface SiO2 layer. The main fraction of erbium retained in silicon after heat treatments is optically inactive.
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Original Russian Text © K.V. Feklistov, D.S. Abramkin, V.I. Obodnikov, V.P. Popov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 16, pp. 52–60.
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Feklistov, K.V., Abramkin, D.S., Obodnikov, V.I. et al. Doping silicon with erbium by recoil implantation. Tech. Phys. Lett. 41, 788–792 (2015). https://doi.org/10.1134/S1063785015080209
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DOI: https://doi.org/10.1134/S1063785015080209