Abstract
The effect of doping with gold on the photoluminescence properties and electronic states of structures consisting of porous Si and single-crystal Si, formed by chemical stain etching, was studied. The time-resolved photoluminescence spectra and the temperature dependences of the capacitor photovoltage were measured. It is shown that the introduction of Au from gold-salt solutions into porous Si somewhat decreases the intensity of photoluminescence and changes its spectral distribution. The parameters of electronic states in porous Si and at the interface between porous Si and single-crystal Si change more significantly, which manifests itself in photovoltage measurements.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 1, 2004, pp. 117–123.
Original Russian Text Copyright © 2004 by Venger, Kirillova, Kizyak, Mano\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)lov, Primachenko.
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Venger, E.F., Kirillova, S.I., Kizyak, I.M. et al. The effect of a Au impurity on the photoluminescence of porous Si and photovoltage on porous-Si structures. Semiconductors 38, 113–119 (2004). https://doi.org/10.1134/1.1641142
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DOI: https://doi.org/10.1134/1.1641142