Abstract
The formation of nanocrystalline Si films as a result of rapid thermal annealing of silicon-on-insulator structures implanted with high doses of H+ ions is studied. It is ascertained that the process of formation of Si nanocrystals is active even at temperatures of 300–400°C and is controlled by the hydrogen content in the silicon film and by the duration of annealing. It is concluded that the formation of nuclei of the crystalline phase occurs in silicon islands surrounded by microvoids and is caused by the ordering of Si-Si bonds in the course of release of hydrogen from the bound state. It is important that microvoids do not coalesce at temperatures up to ∼900°C in conditions of rapid thermal annealing. It is found that synthesized films exhibit luminescence in the green-orange region of the spectrum at room temperature.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 1, 2004, pp. 111–116.
Original Russian Text Copyright © 2004 by Tyschenko, Popov, Talochkin, Gutakovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Zhuravlev.
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Tyschenko, I.E., Popov, V.P., Talochkin, A.B. et al. Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing. Semiconductors 38, 107–112 (2004). https://doi.org/10.1134/1.1641141
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DOI: https://doi.org/10.1134/1.1641141