Abstract
The electrical properties of n-type germanium single crystals irradiated with protons were studied by measuring capacitance-voltage characteristics. The thermal treatment of irradiated samples at 200–300°C leads to the formation of highly mobile shallow donor centers. The coefficient of diffusion of these donors is equal to that of atomic hydrogen with allowance for capture on traps. It is concluded that atomic hydrogen plays the role of a shallow donor in germanium.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 19, 2003, pp. 26–30.
Original Russian Text Copyright © 2003 by Pokotilo, Petukh, Litvinov.
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Pokotilo, Y.M., Petukh, A.N. & Litvinov, V.V. New hydrogen donors in germanium. Tech. Phys. Lett. 29, 804–805 (2003). https://doi.org/10.1134/1.1623851
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DOI: https://doi.org/10.1134/1.1623851