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Photoconverters based on GaAs/Ge heterostructures grown by low-temperature liquid phase epitaxy

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Abstract

A low-temperature liquid phase epitaxy technique involving rapid cooling of a solution melt has been developed for the growth of epitaxial GaAs films on germanium substrates. Using this method, it is possible to obtain high-quality submicron GaAs epilayers on Ge substrates for photoelectric converters.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. P. Khvostikov, L. S. Lunin, V. I. Ratushnyi, É. V. Oliva, M. Z. Shvarts & O. A. Khvostikova

  2. Volgodonsk Institute (Branch of the Southern-Russia State Technical University, Novocherkassk), Volgodonsk, Russia

    V. P. Khvostikov, L. S. Lunin, V. I. Ratushnyi, É. V. Oliva, M. Z. Shvarts & O. A. Khvostikova

Authors
  1. V. P. Khvostikov
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  2. L. S. Lunin
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  3. V. I. Ratushnyi
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  4. É. V. Oliva
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  5. M. Z. Shvarts
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  6. O. A. Khvostikova
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 14, 2003, pp. 46–49.

Original Russian Text Copyright © 2003 by Khvostikov, Lunin, Ratushny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Oliva, Shvarts, Khvostikova.

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Khvostikov, V.P., Lunin, L.S., Ratushnyi, V.I. et al. Photoconverters based on GaAs/Ge heterostructures grown by low-temperature liquid phase epitaxy. Tech. Phys. Lett. 29, 592–593 (2003). https://doi.org/10.1134/1.1598559

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  • DOI: https://doi.org/10.1134/1.1598559

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