Abstract
Polycrystalline silicon films on polyimide substrates were obtained by a method based on the crystallization of amorphous films under the impact of nanosecond pulses of excimer laser radiation. Characteristics of the film structure were studied by methods of Raman scattering and high-resolution electron microscopy. For the laser crystallization regimes employed, nanocrystalline silicon films with an average grain size of 5 nm were obtained. The results are of interest for the development of large-scale microelectronic devices (active thin-film transistor matrices) on cheap flexible substrates.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 13, 2003, pp. 89–94.
Original Russian Text Copyright © 2003 by Efremov, Volodin, Fedina, Gutakovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Marin, Kochube\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Popov, Minakov, Ulasyuk.
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Efremov, M.D., Volodin, V.A., Fedina, L.I. et al. Nanocrystalline silicon films formed under the impact of pulsed excimer laser radiation on polyimide substrates. Tech. Phys. Lett. 29, 569–571 (2003). https://doi.org/10.1134/1.1598552
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DOI: https://doi.org/10.1134/1.1598552