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Modification of GaAs by medium-energy N +2 ions

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Abstract

The modification of GaAs with a 2500-eV beam containing N +2 and Ar+ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs1−x Nx (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. S. Gordeev, V. V. Bryzgalov, B. N. Makarenko, V. M. Mikushkin, S. G. Konnikov, P. N. Brunkov, V. M. Ustinov & A. E. Zhukov

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  1. Yu. S. Gordeev
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  2. V. V. Bryzgalov
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  3. B. N. Makarenko
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  4. V. M. Mikushkin
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  5. S. G. Konnikov
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  6. P. N. Brunkov
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  7. V. M. Ustinov
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  8. A. E. Zhukov
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 7, 2003, pp. 88–92.

Original Russian Text Copyright © 2003 by Gordeev, Bryzgalov, Makarenko, Mikushkin, Konnikov, Brunkov, Ustinov, Zhukov.

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Gordeev, Y.S., Bryzgalov, V.V., Makarenko, B.N. et al. Modification of GaAs by medium-energy N +2 ions. Tech. Phys. 48, 885–888 (2003). https://doi.org/10.1134/1.1593195

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  • DOI: https://doi.org/10.1134/1.1593195

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