Abstract
Semi-insulating silicon carbide layers have been obtained by diffusion of vanadium into porous 4H-SiC. The diffusion was performed from a film deposited by cosputtering of silicon and vanadium, with the content of the latter equal to 20%. The diffusion profile of vanadium in porous silicon carbide has a complex structure with a fast diffusion coefficient of 7×10−15 cm2/s. The activation energy of the resistivity of vanadium-diffusion-doped porous SiC layers is 1.45 eV. The resistivity of vanadium-doped semi-insulating layers is 5×1011 Ω cm at 500 K, which exceeds the resistivity of undoped porous SiC by two orders of magnitude. The results obtained indicate that porous SiC is a promising material for semi-insulating substrates in device structures based on wide-bandgap semiconductors.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 612–615.
Original Russian Text Copyright © 2003 by Mynbaeva, Lavrent’ev, N. Kuznetsov, A. Kuznetsov, Mynbaev, Lebedev.
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Mynbaeva, M.G., Lavrent’ev, A.A., Kuznetsov, N.I. et al. Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC. Semiconductors 37, 594–597 (2003). https://doi.org/10.1134/1.1575367
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DOI: https://doi.org/10.1134/1.1575367